k6t4016c3b Samsung Semiconductor, Inc., k6t4016c3b Datasheet - Page 5

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k6t4016c3b

Manufacturer Part Number
k6t4016c3b
Description
256kx16 Bit Low Power Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K6T4016C3B Family
AC OPERATING CONDITIONS
TEST CONDITIONS
AC CHARACTERISTICS
DATA RETENTION CHARACTERISTICS
1. Industrial Product: 20 A
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): C
Read
Write
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
UB, LB enable to low-Z output
Chip disable to high-Z output
Output Disable to High-Z Output
UB, LB disable to high-Z output
Output hold from address change
LB, UB valid to data output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
Item
Parameter List
(Test Load and Test Input/Output Reference)
C
L
L
=100pF+1TTL
=50pF+1TTL
(Vcc=4.5~5.5V, Commercial product: T
Symbol
t
V
t
I
SDR
RDR
DR
DR
CS Vcc-0.2V
Vcc=3.0V
See data retention waveform
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
t
OHZ
BHZ
t
t
t
OLZ
BLZ
WC
CW
AW
WP
WR
DW
OW
BW
RC
CO
OE
OH
DH
AA
HZ
BA
AS
LZ
Test Condition
5
A=
Min
0 to 70 C, Industrial product: T
55
10
10
55
45
45
45
25
45
5
5
0
0
0
0
0
0
0
5
-
-
-
-
55ns
Max
55
55
25
20
20
20
25
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
1. Including scope and jig capacitance
Speed Bins
70
10
10
70
60
60
55
30
60
5
5
0
0
0
0
0
0
0
5
-
-
-
-
C
Min
2.0
70ns
L
0
5
-
1)
Max
70
70
35
25
25
25
35
25
A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
=-40 to 85 C)
Typ
-
-
-
-
CMOS SRAM
Min
100
100
10
10
80
80
70
40
5
5
0
0
0
0
0
0
0
5
-
-
-
-
-
100ns
Max
15
5.5
-
-
Max
100
100
50
30
30
30
50
30
80
1)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Revision 5.0
May 2001
Units
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
A

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