k6t4016c3b Samsung Semiconductor, Inc., k6t4016c3b Datasheet - Page 4

• Manufacturer Part Number: k6t4016c3b
• Description: 256kx16 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6T4016C3B Family
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
1. Industrial Product = 50 A
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: V
3. Undershoot: -3.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
Input leakage current
Output leakage current
Operating power supply
Average operating current
Output low voltage
Output high voltage
Standby Current (TTL)
Standby Current(CMOS)
Input capacitance
Input/Output capacitance
Supply voltage
Ground
Input high voltage
Input low voltage
Industrial Product: T
Item
CC
+3.0V in case of pulse width
Item
Item
A
=-40 to 85 C, otherwise specified
A
1)
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
V
I
I
V
I
I
I
I
CC1
CC2
SB1
I
CC
LO
SB
LI
OH
OL
A
=25 C)
V
CS=V
I
Cycle time=1 s, 100% duty, I
CS 0.2V, V
Cycle time=Min, 100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
30ns
IO
OL
OH
IN
Symbol
=0mA, CS=V
30ns
=2.1mA
=Vss to Vcc
=-1.0mA
C
C
IH
IH,
IN
IO
Symbol
or OE=V
Other inputs=V
Vcc
Vss
V
V
IH
IL
IN
0.2V or V
IL
IH
, V
or WE=V
IN
=V
Test Condition
Test Conditions
IL
IN
IL
or V
or V
V
V
Vcc-0.2V
-0.5
4
Min
IN
IO
IL,
4.5
2.2
0
IO
IO
=0V
=0V
IH
1)
IH
V
=0mA
=0mA, CS=V
3)
, Read
IO
=Vss to Vcc
IL,
Typ
5.0
V
0
-
-
IN
=V
Min
-
-
IH
or V
Read
Write
IL
Vcc+0.5
Max
5.5
0.8
0
Max
CMOS SRAM
Min
2.4
10
-1
-1
8
-
-
-
-
-
-
-
2)
Typ
-
-
-
-
-
-
-
-
-
-
Revision 5.0
Max
130
20
0.4
15
15
75
May 2001
Unit
1
1
3
-
Unit
V
V
V
V
1)
pF
pF
Unit
mA
mA
mA
mA
V
V
A
A
A