upa2781 Renesas Electronics Corporation., upa2781 Datasheet - Page 3

• Manufacturer Part Number: upa2781
• Description: Switching N-channel Power Mos Fet/schottky Barrier Diode
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
0.01
100
100
0.1
10
80
60
40
20
1
0
0.01
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
Single pulse
Mounted on ceramic substrate
of 1200 mm
20
I
I
D(pulse)
D(DC)
V
T
Power Dissipation Limited
DS
(at V
R
A
DS(on)
- Ambient Temperature - C
- Drain to Source Voltage - V
40
0.1
2
GS
x 2.2 mm
1000
100
Limited
= 10 V)
0.1
10
1
60
1 m
100 ms
80
1
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET)
100
10 m
120
A
10
= 25°C. All terminals are connected.)
PW = 100 s
140
1 ms
10 ms
DC
Data Sheet G16420EJ1V0DS
100 m
160
100
Single pulse
Mounted on ceramic substrate of 1200 mm
PW - Pulse Width - s
1
2.8
2.4
1.6
1.2
0.8
0.4
2
0
10
0
MOSFET
SCHOTTKY
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
20
R
th(ch-A)
T
A
- Ambient Temperature - C
40
100
= 62.5°C/W
2
60
Mouted on ceramic substrate of
1200 mm
x 2.2 mm
80
2
1000
x 2.2 mm
100
120
PA2781GR
140
160
3