upa2781 Renesas Electronics Corporation., upa2781 Datasheet - Page 5

• Manufacturer Part Number: upa2781
• Description: Switching N-channel Power Mos Fet/schottky Barrier Diode
• Manufacturer: Renesas Electronics Corporation.

SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
100
0.1
25
20
15
10
10
10
5
0
1
1
50
0.1
0
V
V
R
V
Pulsed
Pulsed
DD
GS
G
GS
25
SWITCHING CHARACTERISTICS
V
= 10
= 15 V
= 10 V
= 0 V
F(S-D)
t
t
T
0.2
d(on)
r
ch
0
- Channel Temperature - °C
- Source to Drain Voltage - V
I
t
D
f
V
25
0.4
- Drain Current - A
1
GS
= 4.0 V
125°C
50
0.6
75
100
t
0.8
10
d(off)
125
4.5 V
10 V
T
A
= 25°C
1
150
Data Sheet G16420EJ1V0DS
175
100
1.2
10000
100000
1000
10000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
1000
0.01
10
100
40
35
30
25
20
15
10
SOURCE TO DRAIN DIODE REVERSE CURRENT
0.1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
0.01
5
0
1
0
-50
2
V
V
DD
T
DS
= 24 V
j
4
- Junction Temperature - °C
0.1
- Drain to Source Voltage - V
15 V
Q
6 V
0
G
6
- Gate Charge - nC
30 V
V
DS
8
1
10
50
12
V
GS
14
V
10
DS
100
PA2781GR
V
f = 1 MHz
GS
= 24 V
16
I
D
= 0 V
= 13 A
18
C
C
C
iss
oss
rss
100
20
150
8
7
6
5
4
3
2
1
0
5