upa2502tm Renesas Electronics Corporation., upa2502tm Datasheet - Page 4

• Manufacturer Part Number: upa2502tm
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
2.4
2.0
1.6
1.2
0.8
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
50
40
30
20
10
25
20
15
10
0
5
0
-50
0.1
0
Pulsed
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
V
T
DS
GS
0.2
ch
- Drain to Source Voltage - V
- Channel Temperature - °C
= 10.0 V
0
V
I
D
GS
- Drain Current - A
1
= 4.5 V
10.0 V
0.4
50
0.6
4.5 V
10
V
I
D
DS
100
= 1.0 mA
= 10.0 V
0.8
Data Sheet G16681EJ1V0DS
150
100
1
0.001
0.01
0.01
100
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
0.1
10
10
25
20
15
10
1
1
FORWARD TRANSFER CHARACTERISTICS
5
0
0.01
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
0
V
Pulsed
V
Pulsed
DS
DS
V
= 10.0 V
V
GS
= 10.0 V
GS
- Gate to Source Voltage - V
4
- Gate to Source Voltage - V
0.1
I
2
D
- Drain Current - A
8
1
3
12
T
T
A
A
= −25°C
= 125°C
10
125°C
4
−25°C
25°C
75°C
I
Pulsed
D
75°C
25°C
µ
16
= 7.0 A
PA2502
100
20
5