upa2502tm Renesas Electronics Corporation., upa2502tm Datasheet - Page 5

• Manufacturer Part Number: upa2502tm
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
0.01
100
100
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
10
25
20
15
10
1
1
5
0
-50
0.1
0.4
I
Pulsed
V
Pulsed
D
GS
= 7.0 A
SWITCHING CHARACTERISTICS
V
= 0 V
F(S-D)
T
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0.6
V
- Channel Temperature - °C
0
- Source to Drain Voltage - V
GS
I
D
= 4.5 V
- Drain Current - A
1
10.0 V
0.8
50
t
t
d(on)
d(off)
t
t
f
r
10
V
V
R
DD
GS
G
100
1
= 10 Ω
= 15.0 V
= 10.0 V
Data Sheet G16681EJ1V0DS
100
150
1.2
10000
1000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
100
0.1
6
5
4
3
2
1
0
10
10
1
0.01
0
0.1
DYNAMIC INPUT CHARACTERISTICS
I
D
I
V
f = 1.0 MHz
AS
V
R
V
Starting T
= 13.0 A
GS
DD
GS
G
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
= 13.0 A
V
= 25 Ω
V
= 0 V
= 15.0 V
= 20.0 → 0 V
DS
DD
Q
L - Inductive Load - mH
- Drain to Source Voltage - V
= 6.0 V
G
15.0 V
24.0 V
ch
- Gate Charge - nC
4
0.1
= 25°C
1
E
AS
8
10
1
= 16.9 mJ
µ
C
C
C
PA2502
oss
rss
iss
12
10
100
5