upa2450c Renesas Electronics Corporation., upa2450c Datasheet
upa2450c
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upa2450c Summary of contents
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION μ The PA2450C is a switching device, which can be driven directly by a 2.5 V power source. μ The PA2450C features a low on-state resistance and excellent switching characteristics, and is suitable for ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...
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ELECTRICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 1000 I 100 D(pulse) ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 4 0.2 0.4 0 Drain to Source Voltage - V DS GATE TO SOURE CUT-OFF ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 2 3.1 V 4 100 T - Channel Temperature - ° ...
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When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of ...
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This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion applied to the device should become below 2000 of a device may be degraded and it may result in failure. ...
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The information in this document is current as of June, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...