upa2450c Renesas Electronics Corporation., upa2450c Datasheet - Page 3

• Manufacturer Part Number: upa2450c
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
1000
0.01
120
100
100
0.1
80
60
40
20
10
0
1
0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single Pulse
Mounted on ceramic board of
50 cm
P
I
D
D(DC)
(FET1): P
25
V
2
T
x 1.1 mmt
DS
A
1000
- Ambient Temperature - °C
- Drain to Source Voltage - V
100
D
50
0.1
10
(FET2) = 1:1
1
1
1 m
75
Single Pulse
P
D
(FET1): P
100
I
D(pulse)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
10
125
D
(FET2) = 1:1
PW = 10 μs
100 μs
1 ms
10 ms
150
A
= 25°C)
100 m
Data Sheet G18792EJ1V0DS
175
100
PW - Pulse Width - s
Mounted on FR-4 board of
50 cm
2
x 1.1 mmt
1
Mounted on ceramic board of
50 cm
2.5
1.5
0.5
3
2
1
0
10
0
2
x 1.1 mmt
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
Mounted on ceramic board of
50 cm
- Ambient Temperature - °C
100
50
2
Mounted on FR-4 board of
50 cm
x 1.1 mmt, 2 units
75
2
100
1000
x 1.1 mmt, 2 units
125
μ
150
PA2450C
175
3