upa2610 Renesas Electronics Corporation., upa2610 Datasheet - Page 2

• Manufacturer Part Number: upa2610
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
2
V
TEST CIRCUIT 1 SWITCHING TIME
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
0
GS(−)
τ = 1 s
Duty Cycle ≤ 1%
PG.
µ
τ
CHARACTERISTICS
R
G
D.U.T.
µ
s, Duty Cycle ≤ 2%
Note
Note
R
V
DD
L
Note
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
| y
I
DS(on)1
DS(on)2
DS(on)3
C
t
t
Q
Q
I
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
V
V
DSS
GSS
t
V
t
oss
A
iss
rss
GS
GD
fs
r
f
G
GS(−)
DS(−)
0
DS
0
|
= 25°C)
10%
Data Sheet G16836EJ1V0DS
t
90%
d(on)
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
D
F
t
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
on
G
= 5.0 A, V
= −5.0 A
= 10 Ω
10%
= −20.0 V, V
= −10.0 V, I
= −10.0 V, I
= −10.0 V
t
= m8.0 V, V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= 0 V
= −10.0 V, I
= −4.0 V
= −16.0 V
= −4.0 V
r
V
TEST CONDITIONS
GS
t
10%
d(off)
GS
t
off
D
D
D
90%
= 0 V
DS
D
D
D
= −2.5 A
= −2.5 A
= −1.5 A
90%
GS
t
f
= −1.0 mA
= −2.5 A
= −2.5 A
= 0 V
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
−0.45
MIN.
4
I
G
= −2 mA
50 Ω
TYP.
600
200
435
345
120
5.5
1.2
2.1
0.9
55
66
85
75
45
D.U.T.
MAX.
−10.0
m10.0
−1.50
142
69
88
µ
PA2610
UNIT
mΩ
mΩ
mΩ
nC
nC
nC
µ
µ
pF
pF
pF
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L