upa2610 Renesas Electronics Corporation., upa2610 Datasheet - Page 3

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upa2610

Manufacturer Part Number
upa2610
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
TYPICAL CHARACTERISTICS (T
-0.01
-100
-0.1
120
100
-10
80
60
40
20
-1
0
-0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
0
R
(at V
Single pulse
Mounted on FR-4 board of
645 mm
DS(on)
GS
V
25
Limited
T
= −4.5 V)
DS
2
A
x 1.6 mm
- Ambient Temperature - °C
- Drain to Source Voltage - V
1000
100
50
10
1
-1
1 m
I
D(DC)
I
D(pulse)
Single pulse
75
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10 m
-10
125
A
= 25°C)
1 ms
10 ms
100 ms
10 sec
150
100 m
Data Sheet G16836EJ1V0DS
-100
175
PW - Pulse Width - s
Without board
1
Mounted on FR-4 board of
645 mm
2.5
1.5
0.5
2
2
1
0
10
x 1.6 mm
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - °C
100
50
Mounted on FR-4 board of
645 mm
PW < 10 sec
75
2
1000
100
x 1.6 mm
125
µ
150
PA2610
175
3

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