h5ps1g83nfr Hynix Semiconductor, h5ps1g83nfr Datasheet - Page 9

• Manufacturer Part Number: h5ps1g83nfr
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.1 / Feb. 2010
2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
Note:
2.2 Operating Temperature Condition
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-
2. At 85~95° T
V
Symbol
Symbol
VDDQ
IN,
T
VDDL
T
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
conditions. please refer to JESD51-2 standard.
ment conditions, please refer to JESD51-2 standard.
perature range it must be required an EMRS command to change itself refresh rate.
VDD
OPER
I
STG
I
OZ
V
I
OUT
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Input leakage current; any input 0V VIN VDD;
all other balls not under test = 0V)
Output leakage current; 0V VOUT VDDQ; DQ
and ODT disabled
OPER
, Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-
Operating Temperature
Parameter
Parameter
Rating
0 to 95
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-2 uA ~ 2 uA
-5 uA ~ 5 uA
-55 to +100
Rating
H5PS1G83NFR
Units
°C
Units
uA
uA
°C
V
V
V
V
Notes
1,2
Notes
1, 2
1
1
1
1
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