stl12n65m5 STMicroelectronics, stl12n65m5 Datasheet - Page 4

• Manufacturer Part Number: stl12n65m5
• Description: N-channel 650 V, 0.390 , 8.5 A Powerflattm 8x8 Hv Ultra Low Gate Charge Mdmeshtm V Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/11
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
oss eq.
oss eq.
oss
oss
iss
rss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17450 Rev 1
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0 to 520 V, V
= 10 V
= ± 20 V
= V
= 10 V, I
= 520 V, I
Figure
Test conditions
Test conditions
GS
, I
3)
GS
D
D
D
= 250 µA
= 4.3 A
= 0
= 4.3 A,
GS
C
=125 °C
= 0
Min.
Min.
650
3
-
-
-
-
-
0.390
Typ.
Typ.
900
2.5
22
64
21
22
4
2
9
7
STL12N65M5
0.430
Max.
Max.
100
100
1
5
-
-
-
-
-
oss
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
pF
Ω
Ω
V
V