SMBJ3V3-M3/52 VISHAY [Vishay Siliconix], SMBJ3V3-M3/52 Datasheet

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SMBJ3V3-M3/52

Manufacturer Part Number
SMBJ3V3-M3/52
Description
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
(1)
(2)
Document Number: 89419
Revision: 20-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Peak pulse power dissipation
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 8/20 μs waveform (fig. 1)
Non-repetitive peak forward surge current 8.3 ms single half sine-wave
Power dissipation on infinite heatsink, T
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (T
SMBJ3V3
DEVICE
Non-repetitive current pulse, per fig. 1
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
TYPE
Surface Mount T
T
P
J
V
I
FSM
PPM
max.
MARKING
WM
DEVICE
CODE
KC
DO-214AA (SMBJ)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
BREAKDOWN
4.1
For technical questions within your region, please contact one of the following:
V
VOLTAGE
V
BR
A
MIN.
= 25 °C, unless otherwise noted)
AT I
mA
1.0
T
L
= 75 °C
RANS
175 °C
600 W
3.3 V
60 A
This document is subject to change without notice.
MAXIMUM REVERSE
LEAKAGE CURRENT
200
μA
A
Z
= 25 °C unless otherwise noted)
I
R
ORB
MAX.
AT V
New Product
WM
®
3.3
V
Transient Voltage Supressors
FEATURES
• Uni-directional polarity only
• Peak pulse power: 600 W (10/1000 μs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• Compliant to RoHS Directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
CLAMPING
MAXIMUM
10/1000 μs
7.3
VOLTAGE
260 °C
accordance to WEEE 2002/96/EC
V
V
C
AT I
SYMBOL
P
T
PPM
I
PP
50
FSM
J
A
I
DiodesEurope@vishay.com
, T
PPM
I
P
PP
Vishay General Semiconductor
D
STG
(1)(2)
(2)
CLAMPING
10.3
MAXIMUM
V
VOLTAGE
V
C
8/20 μs
AT I
PPM
200
A
- 65 to + 175
VALUE
COEFFICIENT
600
200
50
60
TYPICAL
5
(10
OF V
TEMP.
- 5.3
www.vishay.com/doc?91000
-4
/°C)
BR
SMBJ3V3
CAPACITANCE
www.vishay.com
JUNCTION
C
TYPICAL
J
1 MHz
5200
UNIT
AT 0 V
pF
°C
W
W
A
A
A
1

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SMBJ3V3-M3/52 Summary of contents

Page 1

... CLAMPING LEAKAGE CURRENT VOLTAGE MAX. 10/1000 μs μ 200 3.3 7.3 50 DiodesEurope@vishay.com This document is subject to change without notice. SMBJ3V3 VALUE UNIT 600 200 A ( 175 °C MAXIMUM TYPICAL TYPICAL CLAMPING JUNCTION TEMP. VOLTAGE ...

Page 2

... Thermal resistance from junction to lead - mounted on 0.2" x 0.2" (5 5.0 mm) copper pads to each terminal (2) Thermal resistance from junction to ambient - mounted on the recommended PCB pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) SMBJ3V3-M3/52 0.096 SMBJ3V3-M3/5B 0.096 RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted) ...

Page 3

... Fig Typical Peak Forward Voltage Drop vs. Peak 100 1000 Mounting Pad Layout Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.18) MIN. 0.060 (1.52) 0.012 (0.305) MIN. 0.006 (0.152) 0.008 (0.2) 0 (0) DiodesEurope@vishay.com This document is subject to change without notice. SMBJ3V3 T = 175 ° °C J 0.4 0.6 0.8 1 1.2 1.4 1.6 1 Forward Voltage Drop (V) ...

Page 4

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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