SMBJ3V3-M3/52 VISHAY [Vishay Siliconix], SMBJ3V3-M3/52 Datasheet - Page 3

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SMBJ3V3-M3/52

Manufacturer Part Number
SMBJ3V3-M3/52
Description
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89419
Revision: 20-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5500
5000
4500
4000
3500
3000
2500
2000
100
10
1
0.01
0
Fig. 6 - Typical Transient Thermal Impedance
Fig. 5 - Typical Junction Capacitance
0.5
0.1
1
0.096 (2.44)
0.084 (2.13)
Reverse Voltage (V)
t - Pulse Duration (s)
0.086 (2.20)
0.077 (1.95)
0.060 (1.52)
0.030 (0.76)
1
1.5
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
DO-214AA (SMB-J-Bend)
2
10
2.5
0.205 (5.21)
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
Cathode Band
100
This document is subject to change without notice.
3
0.008 (0.2)
1000
3.5
0 (0)
New Product
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
100
0.060 (1.52)
0.1
10
Fig. 7 - Typical Peak Forward Voltage Drop vs. Peak
MIN.
1
MIN.
0
DiodesEurope@vishay.com
Vishay General Semiconductor
Mounting Pad Layout
0.2
0.4
V
F
T
- Forward Voltage Drop (V)
J
0.220 REF.
0.6
= 175 °C
Forward Current
0.8
0.085 (2.159)
1
MAX.
www.vishay.com/doc?91000
T
1.2
J
= 25 °C
1.4
SMBJ3V3
1.6
www.vishay.com
1.8
3

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