mbn1200gr HITACHI, mbn1200gr Datasheet - Page 2

• Manufacturer Part Number: mbn1200gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

2400
2200
2000
1800
1600
1400
1200
1000
Collector to Emitter voltage vs. Gate to Emitter voltage
800
600
400
200
10
20
15
10
0
8
6
4
2
0
5
0
0
0
Collector current vs. Collector to Emitter voltage
0
Tc 25 C
Tc 25 C
Vcc 600V
Ic 1200A
Tc 25 C
V
GE
2400
Collector to Emitter Voltage, V
Gate charge characteristics
Gate to Emitter Voltage, V
2
15V 14V13V12V
5
Gate Charge, Q
4800
4
10
7200
6
G
(nC)
Pc 8330W
GE
15
9600
CE
Ic 2400A
Ic 1200A
(V)
TYPICAL
8
TYPICAL
(V)
TYPICAL
12000
20
10
11V
10V
9V
2400
2200
2000
1800
1600
1400
1200
1000
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
Collector to Emitter voltage vs. Gate to Emitter voltage
10
0
0
8
6
4
2
0
Collector current vs. Collector to Emitter voltage
0
0
0
Tc 125 C
V
Tc 25 C
Tc 125 C
Tc 125 C
GE
Forward voltage of free-wheeling diode
0V
Collector to Emitter Voltage, V
Gate to Emitter Voltage, V
1
2
V
5
GE
Forward Voltage, V
15V 14V13V12V
2
4
10
3
6
F
(V)
GE
15
CE
(V)
Ic 2400A
Ic 1200A
4
TYPICAL
8
TYPICAL
PDE-N1200GR12A-0
(V)
TYPICAL
20
5
10
11V
10V
9V