mbm100gr HITACHI, mbm100gr Datasheet

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mbm100gr

Manufacturer Part Number
mbm100gr
Description
Hitachi Igbt Module / Silicon N-channel Igbt
Manufacturer
HITACHI
Datasheet
[Rated 100A/1200V, Dual-pack type]
FEATURES
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T
Notes; *1 : RMS current of diode ≤ 30 Arms
CHARACTERISTICS (T
Notes; *4 : R
Remark; For actual application,please confirm this spec.sheet is the newest revision.
• Low saturation voltage and high speed.
• Low turn-OFF switching loss.
• Low noise due to built-in free-wheeling diode.
• High reliability structure.
• Isolated heat sink (terminals to base).
Hitachi IGBT Module / Silicon N-Channel IGBT
MBM100GR12A
Reverse Recovery Time
C2E1
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Switching Times
Peak Forward Voltage Drop
Thermal Impedance
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
(Ultra Soft and Fast recovery Diode (USFD))
*2 , *3 : Recommended value 1.67 N·m
the suitable R
G
value is the test condition’s value for decision of the switching times, not recommended value, please determine
Item
E2
Item
G
IGBT
FWD
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Rise Time
Turn-On Time
Fall Time
Turn-Off Time
DC
1ms
DC
1ms
Terminals
Mounting
C
=25°C)
C1
Symbol
V
V
R
R
I
I
GE(TO)
V
CE(sat)
C
CES
GES
t
t
th(j-c)
th(j-c)
t
t
on
t
off
FM
ies
rr
r
f
C
Symbol
G2
G1
E2
E1
=25°C)
V
V
V
T
I
I
P
-
GES
I
T
CES
CP
I
FM
C
stg
F
iso
°C/W
C
Unit
j
mA
nA
pF
µs
µs
V
V
V
Min.
OUTLINE DRAWING
-
-
-
-
-
-
-
-
-
-
-
-
N·m
Unit
°C
°C
W
V
V
A
A
V
RMS
2- 5.6
9000
Typ.
0.15
2.2
0.3
0.1
0.5
0.2
2.5
-
-
-
-
3-M5
±500
Max.
0.18
1.0
2.8
0.3
0.6
0.3
1.0
0.4
3.5
0.4
10
-
C2E1
19
23
V
V
I
V
V
V
R
V
Inductive Load
I
I
Junction to case
2500(AC 1 minute)
C
F
F
CE
GE
CE
CE
CC
G
GE
=100A
=100A, V
=100A, V
=12Ω
E2
92
80
20
=1200V, V
=±20V, V
=5V, I
=10V, V
=600V, I
=±15V
-40 ~ +150
-40 ~ +125
Value
1.96
1.96
23
1200
100
±20
100
200
200
690
C
18.5
40
Test Conditions
=100mA
*4
GE
GE
C1
GE
0.8
C
PDE-M100GR12A-0
CE
=100A
=0V
=15V
*1
=0V, f=1MHz
*2
*3
GE
=0V
=0V
Weight:230g
4-Fast-on
Terminal #110
Unit in mm

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mbm100gr Summary of contents

Page 1

... Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] FEATURES • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) • High reliability structure. ...

Page 2

V 15V14V13V12V GE 200 150 Pc 690W 100 Collector to Emitter Voltage, V Collector current vs. Collector to Emitter voltage ...

Page 3

Vcc 600V V 15V Inductive Load 1 0.5 toff ton 100 Collector Current, I (A) C Switching time vs. Collector current 20 V 600V CC V 15V GE ...

Page 4

... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets ...

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