mbm100gr HITACHI, mbm100gr Datasheet - Page 2

• Manufacturer Part Number: mbm100gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

Collector to Emitter voltage vs. Gate to Emitter voltage
200
150
100
50
20
15
10
10
0
5
0
8
6
4
2
0
0
0
0
Collector current vs. Collector to Emitter voltage
Tc 25 C
Tc 25 C
Vcc 600V
Ic 100A
Tc 25 C
V
Collector to Emitter Voltage, V
GE
200
Gate charge characteristics
Gate to Emitter Voltage, V
2
15V14V13V12V
5
Gate Charge, Q
400
4
10
600
6
G
(nC)
Pc 690W
GE
15
CE
Ic 100A
800
Ic 200A
(V)
TYPICAL
8
TYPICAL
(V)
TYPICAL
1000
20
10
11V
10V
9V
200
150
100
200
150
100
Collector to Emitter voltage vs. Gate to Emitter voltage
50
50
10
0
0
8
6
4
2
0
Collector current vs. Collector to Emitter voltage
0
0
0
V
Tc 25 C
Tc 125 C
Tc 125 C
Tc 125 C
GE
Forward voltage of free-wheeling diode
0V
Collector to Emitter Voltage, V
V
Gate to Emitter Voltage, V
1
GE
2
5
15V14V13V12V
Forward Voltage, V
2
4
10
3
6
F
(V)
GE
15
CE
(V)
Ic 100A
4
Ic 200A
8
TYPICAL
TYPICAL
(V)
PDE-M100GR12A-0
TYPICAL
20
5
10
11V
10V
9V