74LVC10ABQ,115 NXP Semiconductors, 74LVC10ABQ,115 Datasheet - Page 7

IC TRIPLE 3IN NAND GATE 14DHVQFN

74LVC10ABQ,115

Manufacturer Part Number
74LVC10ABQ,115
Description
IC TRIPLE 3IN NAND GATE 14DHVQFN
Manufacturer
NXP Semiconductors
Series
74LVCr
Datasheet

Specifications of 74LVC10ABQ,115

Logic Type
NAND Gate
Number Of Inputs
3
Number Of Circuits
3
Current - Output High, Low
24mA, 24mA
Voltage - Supply
1.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
14-VQFN Exposed Pad, 14-HVQFN, 14-SQFN, 14-DHVQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2994-2
935273592115
Philips Semiconductors
DC CHARACTERISTICS
At recommended operating conditions voltages are referenced to GND (ground = 0 V).
Note
1. All typical values are at V
AC CHARACTERISTICS
GND = 0 V; t
Note
1. Typical value is measured at V
2003 Jun 20
T
V
V
V
V
I
I
SYMBOL
T
t
SYMBOL
LI
CC
PHL
amb
I
amb
IH
IL
OH
OL
Triple 3-input NAND gate
CC
/t
PLH
= 40 to +85 C
= 40 to +85 C
HIGH level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
input leakage current
quiescent supply current
additional quiescent supply
current per input pin
r
propagation delay
nA, nB, nC to nY
= t
f
PARAMETER
PARAMETER
2.5 ns; C
L
CC
= 50 pF.
= 3.3 V and T
CC
= 3.3 V and T
V
V
V
V
I
V
I
see Figs 6 and 7
O
O
I
I
I
I
I
I
I
I
I
I
I
I
= V
= V
= 5.5 V or GND
= V
= 0
= V
= 0
O
O
O
O
O
O
O
WAVEFORMS
amb
= 12 mA
= 100 A
= 12 mA
= 24 mA
= 12 mA
= 100 A
= 24 mA
IH
IH
CC
CC
OTHER
TEST CONDITIONS
TEST CONDITIONS
= 25 C.
or V
or V
or GND;
amb
0.6 V;
IL
IL
= 25 C.
7
1.2
2.7 to 3.6
1.2
2.7 to 3.6
2.7
3.0
3.0
3.0
2.7
3.0
3.0
3.6
3.6
2.7 to 3.6
2.7
3.0 to 3.6
V
V
CC
CC
(V)
(V)
V
2.0
V
V
V
V
1.5
1.5
CC
CC
CC
CC
CC
MIN.
MIN.
0.5
0.2 V
0.6
1.0
0.1
5
3.9
TYP.
TYP.
0.1
CC
(1)
(1)
Product specification
GND
0.8
0.40
0.20
0.55
10
500
6.7
5.7
74LVC10A
5
MAX.
MAX.
V
V
V
V
V
V
V
V
V
V
V
ns
ns
A
A
A
UNIT
UNIT

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