buk454-800b NXP Semiconductors, buk454-800b Datasheet
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buk454-800b
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buk454-800b Summary of contents
Page 1
... DS(ON) resistance PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK454-800A/B MAX. MAX. UNIT -800A -800B 800 800 2.4 2 SYMBOL MAX. UNIT - 800 V - 800 -800A -800B - 2 ...
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... V = 800 ˚ 800 =125 ˚ BUK454-800A 1.0 A BUK454-800B D CONDITIONS 1 MHz 1 gen ...
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... 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j- BUK454-800A VDS / f(V ); parameter RDS(ON) / Ohm BUK454-800A 4 4.2 4.4 4.6 VGS / ˚ f(I ); parameter V DS(ON 1E+ 4.8 4.6 4.4 4 ˚ Rev 1.100 ...
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... f 10000 1000 100 10 80 100 120 140 Fig.12. Typical capacitances f Product Specification BUK454-800A/B VGS(TO max. typ. min. -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions 2.4 A; parameter April 1993 BUK454-800 6 VDS / V =160 5 640 Fig.14. Typical reverse diode current f Product Specification BUK454-800A/B BUK454-800A 150 25 1 VSDS / V ); conditions parameter T SDS GS Rev 1.100 2 j ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.15. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK454-800A/B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.100 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Product Specification BUK454-800A/B Rev 1.100 ...