buk444-800a NXP Semiconductors, buk444-800a Datasheet
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buk444-800a
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buk444-800a Summary of contents
Page 1
... PIN CONFIGURATION case CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS with heatsink compound 1 Product Specification BUK444-800A/B MAX. MAX. UNIT -800A -800B 800 800 1.4 1 6.0 8.0 SYMBOL MAX. UNIT - 800 V - 800 -800A ...
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... Measured from source lead 6 mm from package to source bond pad CONDITIONS R.H. 65% ; clean and dustfree CONDITIONS - - 1.4 A; -dI /dt = 100 100 Product Specification BUK444-800A/B MIN. TYP. MAX. UNIT 800 - - V 2.1 3.0 4 0.1 1 100 ...
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... Fig.5. Typical output characteristics BUK444-800A 100 100 1000 = 25 ˚C Fig.6. Typical on-state resistance Product Specification BUK444-800A/B BUKx44-hv Zth / (K/ 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance. ...
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... f 10000 1000 100 10 80 100 120 140 Fig.12. Typical capacitances f Product Specification BUK444-800A/B VGS(TO max. typ. min. -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions 2.4 A; parameter April 1993 BUK454-800 6 VDS / V =160 5 640 Fig.14. Typical reverse diode current f Product Specification BUK444-800A/B BUK454-800A 150 25 1 VSDS / V ); conditions parameter T SDS GS Rev 1.100 2 j ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 10.2 max 5.7 max 3.2 3.0 4 0.9 M 0.4 0.7 2.54 5.08 top view 6 Product Specification BUK444-800A/B 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 seating plane 13.5 min 0.55 max 1.3 Rev 1.100 17 max ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Product Specification BUK444-800A/B Rev 1.100 ...