S12ATD10B8CV2 MOTOROLA [Motorola, Inc], S12ATD10B8CV2 Datasheet - Page 100
S12ATD10B8CV2
Manufacturer Part Number
S12ATD10B8CV2
Description
MC9S12DT128 Device User Guide V02.09
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.S12ATD10B8CV2.pdf
(138 pages)
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MC9S12DT128 Device User Guide — V02.09
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
100
NOTE:
Num C
1
2
3
4
5
Human Body
Machine
Latch-up
Model
C Human Body Model (HBM)
C Machine Model (MM)
C Charge Device Model (CDM)
C
C
Please refer to the temperature rating of the device (C, V, M) with regards to the
ambient temperature T
Latch-up Current at 125 C
positive
negative
Latch-up Current at 27 C
positive
negative
Table A-3 ESD and Latch-Up Protection Characteristics
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Minimum input voltage limit
Maximum input voltage limit
Table A-2 ESD and Latch-up Test Conditions
Rating
A
Description
and the junction temperature T
Symbol
V
V
V
I
I
HBM
CDM
LAT
LAT
MM
Symbol
J
. For power dissipation
R1
R1
C
C
–
–
2000
+100
–100
+200
–200
Min
200
500
Value
1500
–2.5
100
200
7.5
–
3
3
0
–
3
3
Max
–
–
–
–
–
Unit
Ohm
Ohm
pF
pF
V
V
Unit
mA
mA
V
V
V
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