S12ATD10B8CV2 MOTOROLA [Motorola, Inc], S12ATD10B8CV2 Datasheet - Page 113

• Manufacturer Part Number: S12ATD10B8CV2
• Description: MC9S12DT128 Device User Guide V02.09
• Manufacturer: MOTOROLA [Motorola, Inc]

A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
Conditions are shown in Table A-4 unless otherwise noted
Num C
1
2
3
4
C
C Flash number of Program/Erase cycles
C
C
Data Retention at an average junction temperature of
T
EEPROM number of Program/Erase cycles
(–40 C
EEPROM number of Program/Erase cycles
(0 C < T
Javg
= 70 C
J
T
J
140 C)
0 C)
Table A-12 NVM Reliability Characteristics
Rating
Symbol
t
NVMRET
n
n
n
EEPE
EEPE
FLPE
MC9S12DT128 Device User Guide — V02.09
100,000
10,000
10,000
Min
15
Typ
Max
Cycles
Cycles
Cycles
Years
Unit
113