hy5du561622ftp-4i Hynix Semiconductor, hy5du561622ftp-4i Datasheet - Page 22

• Manufacturer Part Number: hy5du561622ftp-4i
• Description: 256m 16mx16 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 1.1 / Mar. 2008
DC CHARACTERISTICS II
Operating Current
Precharge Power Down
Standby Current
Idle Standby Current
Active Power Down
Standby Current
Active Standby Current
Operating Current
Auto Refresh Current
Self Refresh Current
Parameter
Symbol
IDD4W
I
I
I
I
I
I
I
I
DD2N
DD3N
DD4R
DD2P
DD3P
DD1
DD5
DD6
(TA=-40 ~ 85
One bank; Active - Read - Precharge;
Burst Length=4; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per clock
cycle; IOUT=0mA
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN=VREF for DQ, DQS and DM
One bank active; Power down mode ; CKE=Low,
tCK=tCK(min)
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing
once per clock cycle
Burst=2;Reads; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); IOUT=0mA
Burst=2; Writes; Continuous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK=tCK(min); DQ, DM and DQS inputs
changing twice per clock cycle
tRC=tRFC(min); All banks active
CKE=<0.2V; External clock on; tCK=tCK(min)
o
C, Voltage referenced to V
Test Condition
SS
= 0V)
1HY5DU561622FTP-5I
HY5DU561622FTP-4I
160
220
220
200
20
80
55
90
4
5
Speed
150
200
200
180
20
70
50
80
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
22