MMDL301 ONSEMI [ON Semiconductor], MMDL301 Datasheet

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MMDL301

Manufacturer Part Number
MMDL301
Description
Silicon Hot-Carrier Diodes
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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Schottky Barrier Diode
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low–cost, high–volume consumer
and industrial/commercial requirements. They are available in a
Surface Mount package.
*FR–5 Minimum Pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
January, 2000 – Rev. 0
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T J , T stg
Reverse Breakdown Voltage (I R = 10 A)
Total Capacitance (V R = 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (V R = 25 V) Figure 3
Forward Voltage (I F = 1.0 mAdc) Figure 4
Forward Voltage (I F = 10 mAdc) Figure 4
These devices are designed primarily for high–efficiency UHF and
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V
Low Reverse Leakage – I R = 13 nAdc (Typ)
Device Marking: 4T
R qJA
Semiconductor Components Industries, LLC, 2001
V R
P D
Reverse Voltage
Total Device Dissipation FR–5 Board,*
Thermal Resistance Junction to Ambient
Junction and Storage
T A = 25 C
Derate above 25 C
Temperature Range
(T J = 125 C unless otherwise noted)
Characteristic
Characteristic
Preferred Device
Rating
(T A = 25 C unless otherwise noted)
–55 to
Value
+150
Max
1.57
200
635
30
1
mW/ C
Volts
Unit
Unit
mW
C/W
C
Symbol
V (BR)R
C T
V F
V F
I R
Preferred devices are recommended choices for future use
and best overall value.
MMDL301T1
HOT–CARRIER DETECTOR
Device
AND SWITCHING DIODES
Min
30
ORDERING INFORMATION
30 VOLTS SILICON
http://onsemi.com
SOD–323
Package
0.38
0.52
Typ
1
0.9
13
CASE 477
SOD–323
PLASTIC
Publication Order Number:
2
Max
0.45
200
3000 / Tape & Reel
1.5
0.6
Shipping
MMDL301T1/D
nAdc
Volts
Unit
Vdc
Vdc
pF

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