at-32032 Avago Technologies, at-32032 Datasheet - Page 2

• Manufacturer Part Number: at-32032
• Description: Low Current, High Performance Npn Silicon Bipolar Transistor
• Manufacturer: Avago Technologies

AT-32032 Absolute Maximum Ratings
Electrical Specifications, T
AT-32032 Characterization Information, T
Symbol
Symbol
Symbol
|S
V
V
V
T
G
P
I
I
IP
NF
P
G
h
21
EBO
CBO
CEO
CBO
EBO
I
T
STG
1dB
1dB
C
T
FE
j
|
A
3
E
2
Power at 1 dB Gain Compression (opt tuning)
Gain at 1 dB Gain Compression (opt tuning)
Output Third Order Intercept Point (opt tuning)
Gain in 50 Ω System
Noise Figure
Associated Gain
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
V
V
V
V
V
V
V
V
V
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
CE
CE
CE
CE
Parameters and Test Conditions
CE
CE
CE
CB
EB
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
= 3 V
= 1 V
Parameters and Test Conditions
Parameter
C
C
C
C
C
C
C
= 20 mA
= 20 mA
= 20 mA
= 2 mA
= 5 mA
A
= 5 mA
= 5 mA
= 25°C
[2, 3]
A
Units
mW
= 25°C
mA
°C
°C
V
V
V
f = 0.9 GHz
f = 1.8 GHz
f = 0.9 GHz
f = 1.8 GHz
Maximum
Absolute
-65 to 150
200
150
1.5
5.5
11
40
Units
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
dB
dB
µA
µA
–
[1]
Notes:
1. Operation of this device above any one
2. T
3. Derate at 2.86 mW/°C for
Min.
of these parameters may cause
permanent damage.
T
13.5
MOUNTING SURFACE
MOUNTING SURFACE
70
2
Thermal Resistance
Units
dBm
θ
dBm
dB
dB
jc
= 350°C/W
Typ.
1.25
10.5
15.0
1.0
> 80°C.
= 25°C.
Typ.
15.5
11.5
13
23
Max.
[2]
300
0.2
1.5
1.3
: