at-32032 Avago Technologies, at-32032 Datasheet - Page 6

• Manufacturer Part Number: at-32032
• Description: Low Current, High Performance Npn Silicon Bipolar Transistor
• Manufacturer: Avago Technologies

gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
AT-32032 Typical Scattering Parameters,
AT-32032 Typical Noise Parameters,
Common Emitter, Z
Freq.
10.0
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1 – |S
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
2 * |S
S
S
11
21
12
21
|
| / |S
2
(k
12
– |S
| |S
± √
12
Mag
0.484
0.344
0.257
0.165
0.124
0.112
0.144
0.209
0.296
0.394
0.489
0.564
0.627
21
|
22
k
|
|
F
2
2
dB
0.9
1.2
1.2
1.3
1.5
1.7
1.9
–1)
min
+ |D|
S
O
11
= 50 Ω, V
2
; D = S
-103
-130
-160
Ang
143
100
-70
-88
72
57
43
28
10
-9
Mag
0.23
0.295
0.31
0.35
0.41
0.47
0.54
11
S
CE
22 –
18.65
16.04
13.98
10.90
-1.05
-0.12
= 2.7 V, I
8.76
5.93
4.19
3.01
2.14
1.43
0.70
dB
Γ
S
opt
12
S
21
Ang
-173
-142
-114
138
152
-93
71
C
Mag
8.559
6.339
5.000
3.509
2.740
1.979
1.620
1.414
1.279
1.179
1.084
0.986
0.886
= 5 mA
S
Common Emitter, Z
21
ohms
11.0
20.0
R
Ang
7.5
5.1
4.6
4.1
5.8
113
-25
-43
-61
-78
-94
n
98
87
70
57
33
13
-7
G
-25.51
-23.25
-21.46
-18.59
-16.29
-12.69
15.6
11.5
10.4
-9.89
-7.55
-5.58
-3.94
-2.79
-2.18
-2.10
dB
dB
assoc
O
9.1
8.2
7.4
6.7
= 50 Ω, V
Mag
0.053
0.069
0.085
0.118
0.153
0.232
0.320
0.419
0.526
0.636
0.725
0.778
0.786
S
CE
12
= 2.7 V, I
25
20
15
10
Figure 11. Gain vs. Frequency at
2.7 V, 5 mA.
Note: dB(|S
5
0
0
6
dB(S[2,1])
Ang
1
gmax
-10
-30
-50
-71
62
61
61
60
57
48
37
24
C
8
FREQUENCY (GHz)
k
= 5 mA
2
21
|) = 20 * log(|S
3
Mag
0.680
0.602
0.561
0.522
0.502
0.477
0.454
0.418
0.353
0.275
0.270
0.355
0.455
4
S
22
5
Ang
-124
-166
21
137
-26
-28
-29
-33
-39
-55
-73
-95
91
58
6
|)
1.25
1
0.75
0.5
0.25
0