at-32032 Avago Technologies, at-32032 Datasheet - Page 5

• Manufacturer Part Number: at-32032
• Description: Low Current, High Performance Npn Silicon Bipolar Transistor
• Manufacturer: Avago Technologies

AT-32032 Typical Noise Parameters,
Common Emitter, Z
AT-32032 Typical Scattering Parameters,
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
Freq.
10.0
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Freq.
1 – |S
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
2 * |S
S
S
11
21
12
21
|
| / |S
2
(k
12
– |S
| |S
± √
Mag
0.744
0.609
0.489
0.351
0.280
0.236
0.258
0.317
0.387
0.455
0.516
0.563
0.610
12
21
|
22
k
|
F
|
2
dB
2
0.9
1.2
1.2
1.4
1.6
1.8
2.1
–1)
min
+ |D|
S
O
11
= 50 Ω, V
2
Ang
-129
-158
; D = S
149
105
-57
-78
-96
-14
72
51
34
19
3
Mag
0.38
0.41
0.42
0.44
0.47
0.52
0.57
11
S
CE
22 –
14.37
12.86
11.40
-2.00
-0.24
-0.80
-1.39
= 2.7 V, I
dB
8.86
6.93
4.28
2.58
1.36
0.43
Γ
S
opt
12
S
21
-152
-123
-100
Ang
124
136
176
57
C
Mag
5.232
4.394
3.714
2.774
2.221
1.636
1.346
1.170
1.051
0.973
0.913
0.852
0.794
= 2 mA
S
21
Common Emitter, Z
ohms
10.6
10.5
20.6
R
Ang
6.2
5.3
3.4
4.9
130
112
-26
-42
-58
-74
-89
n
98
77
61
34
11
-8
-23.72
-21.73
-20.58
-19.05
-17.56
-14.08
-10.62
G
-7.54
-5.11
-3.28
-2.24
-1.86
-2.00
14.0
10.5
dB
dB
assoc
9.4
8.4
7.5
6.9
6.2
O
= 50 Ω, V
0.065
0.082
0.094
0.112
0.133
0.198
0.295
0.420
0.555
0.686
0.772
0.807
0.795
Mag
S
CE
12
Figure 10. Gain vs. Frequency at
2.7 V, 2 mA.
Note: dB(|S
20
16
12
= 2.7 V, I
8
4
0
0
5
dB(S[2,1])
Ang
1
gmax
-30
-52
-73
60
52
49
48
49
50
44
30
13
-8
FREQUENCY (GHz)
k
C
2
21
= 2 mA
|) = 20 * log(|S
3
0.839
0.755
0.694
0.625
0.592
0.561
0.541
0.510
0.447
0.373
0.367
0.431
0.504
Mag
4
S
22
5
-103
-135
-178
Ang
129
21
-22
-28
-31
-37
-43
-59
-78
86
55
6
|)
1.25
1
0.75
0.5
0.25
0