at-32032 Avago Technologies, at-32032 Datasheet - Page 4

• Manufacturer Part Number: at-32032
• Description: Low Current, High Performance Npn Silicon Bipolar Transistor
• Manufacturer: Avago Technologies

AT-32032 Typical Scattering Parameters,
AT-32032 Typical Noise Parameters,
Common Emitter, Z
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
Freq.
10.0
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Freq.
1 – |S
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
2 * |S
S
S
11
21
12
21
|
| / |S
2
(k
12
– |S
| |S
± √
Mag
0.852
0.760
0.655
0.523
0.451
0.403
0.419
0.459
0.497
0.529
0.561
0.590
0.626
12
21
|
22
k
|
F
|
2
2
dB
1.1
1.3
1.4
1.6
1.8
2.0
2.2
–1)
min
+ |D|
S
O
11
= 50 Ω, V
2
Ang
-130
-161
; D = S
147
104
-51
-74
-94
-17
69
45
27
13
-2
Mag
0.48
0.51
0.52
0.54
0.57
0.61
0.65
11
S
CE
22 –
-0.92
-1.56
-1.84
-2.07
-2.34
-2.74
= 1 V, I
9.61
8.68
7.68
5.75
4.11
1.76
0.20
dB
Γ
S
opt
12
S
21
-153
-125
-102
Ang
C
129
143
177
63
= 1 mA
Mag
3.024
2.717
2.420
1.939
1.606
1.224
1.023
0.899
0.836
0.809
0.788
0.764
0.729
S
21
Common Emitter, Z
ohms
14.5
12.7
26.0
R
Ang
6.8
5.2
2.9
4.9
137
119
104
-11
-26
-41
-56
-72
-87
n
79
60
30
7
-20.65
-18.39
-17.35
-16.68
-16.52
-14.42
-10.21
G
-6.58
-4.22
-2.85
-2.33
-2.28
-2.57
11.5
dB
dB
assoc
8.3
7.4
6.4
5.7
5.0
4.2
O
= 50 Ω, V
Mag
0.093
0.120
0.136
0.147
0.149
0.190
0.309
0.469
0.615
0.720
0.765
0.769
0.744
S
CE
12
20
15
10
Figure 9. Gain vs. Frequency at
1 V, 1 mA.
Note: dB(|S
-5
= 1 V, I
5
0
0
4
dB(S[2,1])
Ang
1
-18
-40
-60
-79
gmax
59
48
40
32
31
43
42
26
C
5
FREQUENCY (GHz)
k
= 1 mA
2
21
|) = 20 * log(|S
3
Mag
0.895
0.821
0.756
0.665
0.615
0.565
0.527
0.478
0.411
0.379
0.425
0.495
0.555
4
S
22
5
Ang
-127
-168
21
141
-21
-29
-35
-44
-52
-71
-96
96
63
38
6
|)
1.25
1
0.75
0.5
0.25
0