2SK1120_06 TOSHIBA [Toshiba Semiconductor], 2SK1120_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK1120_06
• Description: Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
K1120
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
t
Q
DSF
DR
off
oss
t
on
rss
t
iss
gs
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
V
I
D
DR
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
= 8 A, V
= 800 V, V
= 10 V, I
= 20 V, I
= 25 V, V
≈ 400 V, V
= ±20 V, V
= 10 V, I
GS
2
D
D
D
GS
(Ta = 25°C)
GS
Test Condition
Test Condition
= 1 mA
= 4 A
DS
GS
= 4 A
GS
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
= 0 V
—
—
D
= 8 A
1000
Min
Min
1.5
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1300
Typ.
Typ.
100
180
100
120
1.5
4.0
—
—
—
—
25
40
20
70
50
—
—
—
2006-11-09
±100
−1.9
2SK1120
Max
Max
300
3.5
1.8
24
—
—
—
—
—
—
—
—
—
—
—
—
8
Unit
Unit
μA
nC
nA
pF
ns
V
V
Ω
S
A
A
V