2SJ610_09 TOSHIBA [Toshiba Semiconductor], 2SJ610_09 Datasheet

2SJ610_09

Manufacturer Part Number

2SJ610_09

Description

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SJ610_09.pdf (6 pages)

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Switching Regulator, DC/DC Converter and

Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristic

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)

= 25 Ω

= −50 V, T

Pulse (t = 1 ms)

DSS

= 20 kΩ)

= −1.5 to −3.5 V (V

(Note 1)

(Note 2)

= −100 μA (V

= 25°C (initial), L = 75 mH, I

DS (ON)

(Ta = 25°C)

| = 18 S (typ.)

Symbol

DGR

GSS

DSS

stg

Symbol

th (ch-a)

th (ch-c)

= 1.85 Ω (typ.)

= −250 V)

2SJ610

= 10 V, I

−55 to 150

Rating

−250

−2.0

−4.0

−2.0

±20

180

150

2.0

Max

6.25

125

= 1 mA)

= −2.0 A,

Unit

°C

°C/W

Unit

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

0.6 ± 0.15

0.95 MAX.

0.8 MAX.

0.6 ± 0.15

2.3 ± 0.15

1. GATE

2. DRAIN

3. SOURSE

1. GATE

2. DRAIN

3. SOURSE

（HEAT SINK）

5.2 ± 0.2

6.5 ± 0.2

6.8 MAX.

2.3

2.3 ± 0.15

2.3

1.05 MAX.

2-7B1B

2-7J1B

SC-64

2009-07-13

―

2SJ610

Unit: mm

0.6 MAX.

1.1 ± 0.2

0.6 MAX.

Related parts for 2SJ610_09

2SJ610_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) Switching Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current −100 μA (V DSS • Enhancement ...

Page 2

Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...

Page 3

I – −2 Common source − 25°C, pulse test −15 −1.5 −5.5 − −4 V −0.5 0 −1 −2 −3 0 Drain-source voltage V ( – −4 ...

Page 4

R – (ON) 5 Common source = − Pulse test 4 − − −80 − Case temperature Tc (°C) Capacitance – ...

Page 5

Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 Single pulse 0.01 0.01 0.005 0.003 0.001 10 μ 100 μ Safe operating area −100 −50 −30 − max (pulsed) * −5 100 μs ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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