2SJ567_09 TOSHIBA [Toshiba Semiconductor], 2SJ567_09 Datasheet
2SJ567_09
Related parts for 2SJ567_09
2SJ567_09 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current −100 μA (max) (V ...
Page 2
Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge ...
Page 3
I – −2.0 −8 −6 −5 Common source Tc = 25°C −10 Pulse test −1.6 −15 −1.2 −0 −4 V −0.4 0 −1 −2 −3 −4 0 (V) Drain-source voltage – ...
Page 4
R – (ON) 6 Common source − −1 Pulse test −1 −80 − Case temperature Tc (°C) Capacitance – ...
Page 5
Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 0.01 0.005 0.003 0.001 10 μ 100 μ Safe operating area − max (pulse) * −10 −5 1 ms* −3 −1 −0.5 −0.3 ...
Page 6
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...