2SJ567_09 TOSHIBA [Toshiba Semiconductor], 2SJ567_09 Datasheet - Page 4

• Manufacturer Part Number: 2SJ567_09
• Description: TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

1000
100
10
40
30
20
10
−0.1
−80
6
5
4
3
2
1
0
1
0
0
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Common source
V GS = −10 V
Pulse test
−40
Drain-source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
40
Capacitance – V
−1
0
R
DS (ON)
P
D
40
80
– Tc
– Tc
−10
80
DS
DS
−1.2
120
I D = −1.5 A
(V)
120
C oss
C iss
C rss
−1.0
−100
160
160
4
−160
−120
−0.1
−10
−80
−40
−1
-5
-4
-3
-2
-1
−80
0
0
0
0
Common source
Tc = 25°C
Pulse test
V DS
Dynamic input/output characteristics
−5
−40
0.2
Drain-source voltage V
4
Total gate charge Q
Case temperature Tc (°C)
V GS
−3
0
V DS = −40 V
0.4
I
8
DR
V
−80
th
– V
40
– Tc
−160
DS
0.6
12
−1
g
80
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
Common source
I D = −2.5 A
Tc = 25°C
Pulse test
V GS = 0 V
(V)
0.8
16
120
2009-07-13
2SJ567
160
20
1
−16
−12
−8
−4