2SJ567_09 TOSHIBA [Toshiba Semiconductor], 2SJ567_09 Datasheet - Page 2

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2SJ567_09

Manufacturer Part Number
2SJ567_09
Description
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(Gate source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristic
J567
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Part No.
Lot No.
Note 4
(Note 1)
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
Note 4: A line under a Lot No. identifies the indication of product Labels
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
oss
on
off
rss
t
t
iss
gs
gd
th
fs
Symbol
r
f
g
V
I
I
DRP
Q
DSF
DR
t
rr
rr
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
V
V
I
V
V
V
V
Duty ≤ 1%, t
V
I
V
D
D
GS
DS
DS
GS
DS
DS
DD
GS
−10 V
= −10 mA, V
= −2.5 A
I
I
dI
0 V
DR
DR
= −200 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±16 V, V
= −10 V, I
≈ −160 V, V
DR
2
= −2.5 A, V
= −2.5 A, V
(Ta = 25°C)
/dt = 100 A/μs
Test Condition
w
Test Condition
= 10 μs
D
D
D
GS
GS
DS
GS
= −1 mA
= −1.5 A
= −1.5 A
GS
I
D
= 0 V
= 0 V
= 0 V, f = 1 MHz
GS
GS
= 0 V
= −10 V,
= −1.5 A V
= 0 V
= 0 V,
V
DD
R
≈ −100 V
L
= 66.7 Ω
OUT
−200
−1.5
Min
Min
1.0
Typ.
Typ.
0.81
410
145
135
1.6
2.0
40
20
45
15
85
10
6
4
2009-07-13
−100
Max
−3.5
Max
−2.5
±10
−10
2.0
2.0
2SJ567
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
S
A
A
V

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