2SK1401A HITACHI [Hitachi Semiconductor], 2SK1401A Datasheet - Page 3
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2SK1401A
Manufacturer Part Number
2SK1401A
Description
Silicon N-Channel MOS FET
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet
1.2SK1401A.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1401A
Manufacturer:
RENESAS
Quantity:
5 000
Company:
Part Number:
2SK1401A
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Electrical Characteristics (Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source K1401
on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
K1401
K1401A
K1401
K1401A
K1401A
Symbol Min
V
V
I
I
V
R
|yfs|
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
300
350
—
—
2.0
—
—
6
—
—
—
—
—
—
—
—
—
30
Typ
—
—
—
—
—
—
0.25
0.30
9.5
1250
420
70
15
80
100
55
1.05
370
Max
—
—
—
250
3.0
0.35
0.40
—
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
2SK1401, 2SK1401A
Test conditions
I
I
V
V
V
I
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
F
F
GS
DS
DS
DS
L
F
= 15 A, V
= 15 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 8 A, V
= 8 A, V
= 8 A, V
/dt = 100 A/ s
= 3.75
= 240 V, V
= 280 V, V
= 10 V, V
= 25 V, V
GS
DS
GS
GS
GS
DS
= 10 V *
= 10 V *
= 10 V,
GS
GS
= 0,
= 0
DS
GS
GS
= 10 V
DS
= 0,
= 0
= 0
= 0
= 0
= 0
1
1
3