2SJ280L HITACHI [Hitachi Semiconductor], 2SJ280L Datasheet

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2SJ280L

Manufacturer Part Number
2SJ280L
Description
SILICON P-CHANNEL MOS FET
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ280L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
2SJ280
Silicon P Channel MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from
• Suitable for Switching regulator, DC – DC
• Avalanche Ratings
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
———————————————————————————————————————————
Gate to source voltage
———————————————————————————————————————————
Drain current
———————————————————————————————————————————
Drain peak current
———————————————————————————————————————————
Body–drain diode reverse drain current
———————————————————————————————————————————
Avalanche current
———————————————————————————————————————————
Avalanche energy
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel temperature
———————————————————————————————————————————
Storage temperature
———————————————————————————————————————————
*
**
***
5 V source
converter
PW 10 µs, duty cycle 1 %
Value at Tc = 25 °C
Value at Tch = 25 °C, Rg 50
L
, 2SJ280
Symbol
V
V
I
I
I
I
E
Pch**
Tch
Tstg
D
D(pulse)
DR
AP
S
DSS
GSS
AR
***
***
*
LDPAK
1
Ratings
–60
±20
–30
–120
–30
–30
77
75
150
–55 to +150
2, 4
3
1
2
Unit
V
V
A
A
A
A
mJ
W
°C
°C
4
3
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4

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2SJ280L Summary of contents

Page 1

L Silicon P Channel MOS FET Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • gate drive device can be driven from 5 V source • ...

Page 2

L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol ——————————————————————————————————————————— Drain to source breakdown V (BR)DSS voltage ——————————————————————————————————————————— Gate to source breakdown V (BR)GSS voltage ——————————————————————————————————————————— Gate to source leak current I GSS ——————————————————————————————————————————— Zero ...

Page 3

Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics –50 –10 V –6 V –4 V –40 –3 V –3.5 V –30 –20 –2.5 V – – ...

Page 4

L , 2SJ280 S Drain-Source Saturation Voltage vs. Gate-Source Voltage –2.0 Pulse Test –1.6 –1 – –0.8 –0.4 0 –2 –4 –6 Gate to Source Voltage V Static Drain-Source on State Resistance vs. Temperature 0.1 ...

Page 5

Body-Drain Diode Reverse Recovery Time 500 200 100 50 di/ 25° –1 –2 –5 –10 –20 –50 –100 Reverse Drain Current I (A) DR Dynamic Input Characteristics ...

Page 6

L , 2SJ280 S Reverse Drain Current vs. Source to Drain Voltage –50 Pulse Test – – –30 –20 – – –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage V ...

Page 7

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Page 8

Silicon P-Channel MOS FET Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • gate drive device can be driven from 5 V source • Suitable for Switching regulator, ...

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