2SJ245L HITACHI [Hitachi Semiconductor], 2SJ245L Datasheet
2SJ245L
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2SJ245L Summary of contents
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L SILICON P-CHANNEL MOS FET Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • Gate drive device can be driven from 5 V source • Suitable ...
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L , 2SJ245 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol ———————————————————————————————————————————– Drain to source breakdown V (BR)DSS voltage ———————————————————————————————————————————– Gate to source breakdown V (BR)GSS voltage ———————————————————————————————————————————– Gate to source leak current I GSS ———————————————————————————————————————————– Zero ...
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Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics –10 –6 V –10 V –5 V –4 V –8 Pulse test –6 –3.5 V –4 –3 V – –2.5 V ...
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L , 2SJ245 S Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 –0 –0.6 –0.4 –0.2 Pulse test 0 –2 –4 –6 Gate to Source Voltage V Static Drain to Source on State Resistance ...
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Body to Drain Diode Reverse Recovery Time 1000 500 200 100 50 di/ A/µ 25°C Pulse test 10 –0.1 –0.2 –0.5 –1 –2 Reverse Drain Current I DR Dynamic Input Characteristics ...
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L , 2SJ245 S Reverse Drain Current vs. Source to Drain Voltage –5 –4 –3 –10 V –2 – –1 Pulse test 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage V ...
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Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Pulse Width Vout Vin Monitor Monitor D.U. Vin ...