2SJ245L HITACHI [Hitachi Semiconductor], 2SJ245L Datasheet - Page 4

• Manufacturer Part Number: 2SJ245L
• Description: SILICON P-CHANNEL MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ245 L , 2SJ245 S
–1.0
–0.8
–0.6
–0.4
–0.2
1.0
0.8
0.6
0.4
0.2
Static Drain to Source on State Resistance
–40
0
0
Drain to Source Saturation Voltage vs.
Pulse test
Gate to Source Voltage
Pulse test
Case Temperature
–2
0
V
Gate to Source Voltage
GS
–10 V
vs. Temperature
= –4 V
40
–4
–3 A
80
–6
–I
D
Tc (°C)
I
D
V
= –1, –2 A
–1 A
–2 A
–1, –2 A
120
GS
= –3 A
–8
(V)
–3 A
160
–10
0.05
0.5
0.2
0.1
0.5
0.2
0.1
10
–0.1 –0.2
5
2
1
Static Drain to Source on State Resistance
–0.5
5
2
1
Pulse test
Forward Transfer Admittance
V
–1
GS
Drain Current
Drain Current
Tc = –25°C
= –4 V
vs. Drain Current
–2
vs. Drain Current
–0.5
–10 V
–1
–5
75°C
I
I
25°C
–2
–10 –20
Pulse test
V
D
D
DS
(A)
(A)
= –10 V
–5
–10
–50