2SJ181S HITACHI [Hitachi Semiconductor], 2SJ181S Datasheet
2SJ181S
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2SJ181S Summary of contents
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Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK ...
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Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes ...
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Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –1.0 –10 V –6 V –0.8 –0.6 –5 V –0.4 –4.5 V –0 – –10 –20 –30 Drain to ...
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Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 –0.02 –0.05 –0.1 –0.2 Drain Current 4 Drain to Source Saturation Voltage vs. Gate to Source Voltage –20 –16 ...
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Forward Transfer Admittance vs. Drain Current –25 °C 25 °C 0.5 75 °C 0.2 0.1 0. Pulse Test 0.02 –0.05 –0.1 –0.2 –0.5 –1 Drain Current I D 1000 300 100 30 10 1000 ...
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Dynamic Input Characteristics –100 V DD –250 V –400 –100 V DD –250 V V –400 –0 ...
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Pulse Test –0.8 –0.6 –0.4 –0.2 0 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Reverse Drain Current vs. Source to Drain ...
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Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 – Vout Vin Monitor –30 V Vout td(on) Waveforms 10% 90% 90% 90% 10% 10% td(off ...
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Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...