2SJ181S HITACHI [Hitachi Semiconductor], 2SJ181S Datasheet - Page 4

• Manufacturer Part Number: 2SJ181S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ181(L), 2SJ181(S)
4
500
200
100
50
20
10
–0.02
Static Drain to Source on State Resistance
5
Pulse Test
–0.05 –0.1
Drain Current
vs. Drain Current
–0.2
V
–20
–16
–12
GS
–8
–4
I
0
–0.5
D
= –10 V
Drain to Source Saturation Voltage vs.
(A)
Gate to Source Voltage
–15 V
–1
–4
Gate to Source Voltage
–2
–8
I
D
= –0.5 A
–40
–0.2 A
–0.1 A
12
40
32
24
16
Static Drain to Source on State Resistance
8
0
Pulse Test
Pulse Test
V
V
GS
–16
GS
Case Temperature
= –10 V
0
(V)
vs. Temperature
–20
40
80
I
D
–0.1 A
= –0.5 A
Tc
120
–0.2 A
(°C)
160