2SJ280L HITACHI [Hitachi Semiconductor], 2SJ280L Datasheet - Page 8

• Manufacturer Part Number: 2SJ280L
• Description: SILICON P-CHANNEL MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ290
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from
• Suitable for Switching regulator, DC – DC
• Avalanche Ratings
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————–
Drain to source voltage
———————————————————————————————————————————–
Gate to source voltage
———————————————————————————————————————————–
Drain current
———————————————————————————————————————————–
Drain peak current
———————————————————————————————————————————–
Body–drain diode reverse drain current
———————————————————————————————————————————–
Avalanche current
———————————————————————————————————————————–
Avalanche energy
———————————————————————————————————————————–
Channel dissipation
———————————————————————————————————————————–
Channel temperature
———————————————————————————————————————————–
Storage temperature
———————————————————————————————————————————–
*
**
***
5 V source
converter
PW 10 µs, duty cycle 1 %
Value at Tc = 25 °C
Value at Tch = 25 °C, Rg 50
Symbol
V
V
I
I
I
I
E
Pch**
Tch
Tstg
D
D(pulse)
DR
AP
DSS
GSS
AR
***
***
*
1
TO–220AB
Ratings
–60
±20
–15
–60
–15
–15
19
50
150
–55 to +150
2
3
1
2
3
Unit
V
V
A
A
A
A
mJ
W
°C
°C
1. Gate
2. Drain
3. Source