2SK1930_06 TOSHIBA [Toshiba Semiconductor], 2SK1930_06 Datasheet

2SK1930_06

Manufacturer Part Number

2SK1930_06

Description

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK1930_06.pdf (6 pages)

Current page: 1 of 6
Download datasheet (846Kb)

Chopper Regulator, DC−DC Converter, and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII

Pulse (Note 1)

= 20 kΩ)

: V

DSS

(Note 1)

= 1.5~3.5 V (V

= 300 μA (max) (V

(Ta = 25°C)

Symbol

th (ch–c)

th (ch–a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK1930

| = 2.0 S (typ.)

= 10 V, I

= 3.0 Ω (typ.)

−55~150

= 800 V)

Rating

1000

Max

1.25

83.3

±20

100

150

= 1 mA)

°C / W

Unit

°C

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-10S1B

2-10S2B

)

2006-11-09

―

2SK1930

Unit: mm

Related parts for 2SK1930_06

2SK1930_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII Chopper Regulator, DC−DC Converter, and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 300 μA (max) (V DSS Enhancement mode : ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

Page 3

3 2SK1930 2006-11-09 ...

Page 4

4 2SK1930 2006-11-09 ...

Page 5

5 2SK1930 2006-11-09 ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords

2SK1930_06 datasheet
2SK1930_06 data sheet
2SK1930_06 pdf datasheet
2SK1930_06 component
2SK1930_06 part
2SK1930_06 distributor
2SK1930_06 RoHS
2SK1930_06 datasheet download