SI4310BDY-E3 VISHAY [Vishay Siliconix], SI4310BDY-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4310BDY-E3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 73064
S-41530—Rev. A, 16-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.01
0.1
0.1
2
1
2
1
10
10
−4
−4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
−3
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
100
0.1
10
10
1
0.1
−2
Limited by r
Safe Operating Area, Junction-to-Case
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
V
10
DS
New Product
−2
DS(on)
Single Pulse
T
− Drain-to-Source Voltage (V)
10
C
1
= 25_C
−1
10
10
1
−1
1 ms
10 ms
100 ms
1 s
10 s
dc
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
− T
t
1
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
100
thJA
t
t
1
2
(t)
Si4310BDY
= 92_C/W
CHANNEL-1
www.vishay.com
600
10
5