SI4310BDY-E3 VISHAY [Vishay Siliconix], SI4310BDY-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4310BDY-E3
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si4310BDY
Vishay Siliconix
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
0.012
0.009
0.006
0.003
0.000
50
40
30
20
10
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 14 A
V
V
= 15 V
On-Resistance vs. Drain Current
GS
GS
10
5
1
= 10 thru 4 V
= 4.5 V
V
Q
DS
g
Output Characteristics
I
D
− Total Gate Charge (nC)
− Drain-to-Source Voltage (V)
− Drain Current (A)
Gate Charge
20
10
2
30
15
3
3 V
V
GS
= 10 V
40
20
4
50
25
New Product
5
4000
3500
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
0
−50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
−25
0.5
GS
= 14 A
C
5
rss
V
= 10 V
GS
T
1.0
Transfer Characteristics
V
0
J
DS
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
10
− Drain-to-Source Voltage (V)
1.5
25
Capacitance
T
C
C
oss
= 125_C
25_C
2.0
15
50
S-41530—Rev. A, 16-Aug-04
C
Document Number: 73064
iss
2.5
75
20
CHANNEL-2
100
3.0
25
−55_C
125
3.5
150
4.0
30