SI4463BDY-E3 VISHAY [Vishay Siliconix], SI4463BDY-E3 Datasheet

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SI4463BDY-E3

Manufacturer Part Number
SI4463BDY-E3
Description
P-Channel 2.5-V (G-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 72789
S-40433—Rev. A, 15-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−20
(V)
J
Ordering Information: Si4463BDY—E3 (Lead Free)
ti
t A bi
0.020 @ V
0.014 @ V
0.011 @ V
J
J
a
a
G
S
S
S
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Si4463BDY-T1—E3 (Lead Free with Tape and Reel)
1
2
3
4
GS
GS
GS
a
a
= −2.5 V
= −4.5 V
P-Channel 2.5-V (G-S) MOSFET
= −10 V
Top View
(W)
SO-8
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
−13.7
−12.3
−10.3
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
G
stg
P-Channel MOSFET
S
D
10 secs
Typical
−13.7
−11.1
−2.7
3.0
1.9
35
70
17
−55 to 150
"12
−20
−50
Steady State
Maximum
Vishay Siliconix
−1.36
−9.8
−7.9
0.95
1.5
42
84
21
Si4463BDY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI4463BDY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4463BDY—E3 (Lead Free) Si4463BDY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si4463BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72789 S-40433—Rev. A, 15-Mar-04 New Product 25_C J 0.8 1.0 1.2 Si4463BDY Vishay Siliconix Capacitance 5000 4000 C iss 3000 2000 C oss 1000 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4463BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 125 150 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72789 S-40433—Rev. A, 15-Mar-04 New Product −2 − Square Wave Pulse Duration (sec) Si4463BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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