SI4463BDY-E3 VISHAY [Vishay Siliconix], SI4463BDY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4463BDY-E3
• Description: P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4463BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
V
− Drain-to-Source Voltage (V)
a
GS
= 10 thru 2.5 V
2
a
J
2 V
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
1.5 V
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
4
rr
fs
gs
gd
r
f
g
g
5
New Product
V
DS
I
V
D
DS
= −10 V, V
^ −1 A, V
I
V
V
F
V
= −20 V, V
V
V
GS
V
GS
V
V
V
DS
= −2.3 A, di/dt = 100 A/ms
DS
V
I
DS
S
DS
DD
DD
Test Condition
GS
DS
= −4.5 V, I
= −2.7 A, V
= −10 V, I
= −10 V, I
= −5 V, V
= V
= −20 V, V
= −10 V, R
= −10 V, R
= −2.5 V, I
= 0 V, V
GEN
f = 1 MHz
GS
GS
GS
, I
= −4.5 V, I
= −4.5 V, R
D
= 0 V, T
GS
GS
D
D
D
= −250 mA
GS
GS
D
= −13.7 A
L
L
= −13.7 A
= −12.3 A
= −4.5 V
= "12 V
= 10 W
= 10 W
= −5 A
= 0 V
= 0 V
J
D
50
40
30
20
10
= 70_C
0
= −13.7 A
g
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
Min
−0.6
−30
− Gate-to-Source Voltage (V)
25_C
1.0
T
C
0.0085
0.010
0.015
= 125_C
Typ
−0.7
115
8.7
2.7
44
37
35
60
75
50
11
S-40433—Rev. A, 15-Mar-04
1.5
Document Number: 72789
"100
Max
0.011
0.014
0.020
−1.4
−1.1
−55_C
−10
170
115
−1
56
55
90
75
2.0
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
W
2.5