SI3812DV-T1 VISHAY [Vishay Siliconix], SI3812DV-T1 Datasheet - Page 5

• Manufacturer Part Number: SI3812DV-T1
• Description: N-Channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 71069
S-31725—Rev. E, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
0.1
20
10
1
0
0.01
0.1
Reverse Current vs. Junction Temperature
2
1
10
-4
25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
J
- Junction Temperature (_C)
20 V
50
Single Pulse
75
10 V
10
-3
100
Normalized Thermal Transient Impedance, Junction-to-Foot
150
120
90
60
30
0
0
125
150
4
Square Wave Pulse Duration (sec)
V
10
KA
-2
- Reverse Voltage (V
Capacitance
8
12
0.1
10
5
1
16
-1
0
T
J
= 150_C
0.2
20
V
F
- Forward Voltage Drop (V)
Forward Voltage Drop
0.4
1
Vishay Siliconix
0.6
T
J
Si3812DV
= 25_C
SCHOTTKY
0.8
www.vishay.com
MOSFET
10
1.0
5