SI3812DV-T1 VISHAY [Vishay Siliconix], SI3812DV-T1 Datasheet - Page 6

• Manufacturer Part Number: SI3812DV-T1
• Description: N-Channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: VISHAY [Vishay Siliconix]

Si3812DV
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-2
10
-1
1
10
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
= P
1
t
2
DM
Z
thJA
thJA
100
S-31725—Rev. E, 18-Aug-03
t
t
(t)
1
2
= 140_C/W
Document Number: 71069
SCHOTTKY
600
10