2SJ130S HITACHI [Hitachi Semiconductor], 2SJ130S Datasheet - Page 6

• Manufacturer Part Number: 2SJ130S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ130(L), 2SJ130(S)
6
0.03
0.01
1.0
0.3
0.1
3
10
Vin
–10 V
D = 1
Switching Time Test Circuit
0.05
0.02
Vin Monitor
0.5
0.2
0.1
50
100
Normalized Transient Thermal Impedance vs. Pulse Width
D.U.T
–2.0
–1.6
–1.2
–0.8
–0.4
0
0
–5 V, –10 V
1 m
R
V
=
V
Pulse Test
.
.
Source to Drain Voltage V
L
DD
GS
–30 V
Vout Monitor
–0.4
Reverse Drain Current vs.
= 0
Source To Drain Voltage
Pulse Width PW (s)
–0.8
V
10 m
GS
= 0, 10 V
–1.2
t
Vin
Vout
d (on)
SD
–1.6
100 m
(V)
10%
–2.0
10%
ch–c (t) =
ch–c = 6.25°C/W, T
P
DM
90%
t
r
Waveforms
T
t
d (off)
PW
S
(t) · ch–c
1
T
C
= 25°C
90%
C
D =
90%
= 25°C
10%
PW
t
T
f
10