2SJ360_07 TOSHIBA [Toshiba Semiconductor], 2SJ360_07 Datasheet
2SJ360_07
Manufacturer Part Number
2SJ360_07
Description
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SJ360_07.pdf
(6 pages)
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current : I
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Drain power dissipation
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3:
Thermal resistance, channel to
ambient
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
: V
DSS
th
(Note 2)
= −0.8~−2.0 V (V
= −100 μA (max) (V
(Ta = 25°C)
R
Symbol
Symbol
th (ch−a)
: R
: |Y
V
V
V
T
I
T
DGR
P
P
GSS
DSS
I
DP
stg
D
ch
D
D
DS (ON)
fs
2SJ360
| = 0.9 S (typ.)
DS
= −10 V, I
= 0.55 Ω (typ.)
DS
−55~150
Rating
= −60 V)
Max
−60
−60
±20
150
250
0.5
1.5
−1
−3
1
D
= −1 mA)
°C / W
Unit
Unit
°C
°C
W
W
V
V
V
A
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2
−π−MOSV)
2−5K1B
SC−62
2006-11-15
―
2SJ360
Unit: mm
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2SJ360_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I = −100 μA (max) (V DSS ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
Page 3
3 2SJ360 2006-11-15 ...
Page 4
4 2SJ360 2006-11-15 ...
Page 5
5 2SJ360 2006-11-15 ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...