2SJ387S HITACHI [Hitachi Semiconductor], 2SJ387S Datasheet - Page 7

• Manufacturer Part Number: 2SJ387S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

0.03
0.01
0.3
0.1
3
1
10 µ
D = 1
0.5
100 µ
Normalized Transient Thermal Impedance vs. Pulse Width
–20
–16
–12
–8
–4
0
Source to Drain Voltage
1 m
–5 V
–0.4
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width
–0.8
–3 V
10 m
–1.2
V
GS
PW (S)
Pulse Test
P
V
= 0, 5 V
–1.6
DM
SD
ch – c(t) = s (t) •
ch – c = 6.25 °C/W, Tc = 25 °C
100 m
(V)
–2.0
2SJ387(L), 2SJ387(S)
PW
T
1
ch – c
Tc = 25°C
D =
PW
T
10
7